首页> 外国专利> Power field-effect transistor (FET), pre-driver, controller, and sense resistor integration for multi-phase power applications

Power field-effect transistor (FET), pre-driver, controller, and sense resistor integration for multi-phase power applications

机译:功率场效应晶体管(FET),预驱动器,控制器和感测电阻器集成,用于多相电源应用

摘要

Techniques are described for integrating power field-effect transistors (FETs), pre-drivers, controllers, and/or resistors into a common multi-chip package for implementing multi-phase bridge circuits. The techniques may provide a multi-chip package with at least two high-side (HS) FETs and at least two low-side (LS) FETs, and place the at least two HS FETs or the at least LS FETs on a common die. Placing at least two FETs on a common die may reduce the number of die and the number of thermal pads (i.e., die pads) needed to implement a set of power FETs, thereby decreasing component count of a multi-phase bridge circuit and/or allowing a more compact, higher current density multi-phase bridge circuit to be obtained without significantly increasing thermal power dissipation of the circuit.
机译:描述了用于将功率场效应晶体管(FET),预驱动器,控制器和/或电阻器集成到用于实现多相桥电路的通用多芯片封装中的技术。该技术可以提供具有至少两个高端(HS)FET和至少两个低端(LS)FET的多芯片封装,并将至少两个HS FET或至少LS FET放置在一个公共芯片上。在公共管芯上放置至少两个FET可以减少管芯的数量和实现一组功率FET所需的热焊盘(即,管芯焊盘)的数量,从而减少多相桥电路和/或器件的数量可以在不显着增加电路热功耗的情况下获得更紧凑,电流密度更高的多相桥式电路。

著录项

  • 公开/公告号US9870984B2

    专利类型

  • 公开/公告日2018-01-16

    原文格式PDF

  • 申请/专利权人 TEXAS INSTRUMENTS INCORPORATED;

    申请/专利号US201514965697

  • 发明设计人 INDUMINI RANMUTHU;

    申请日2015-12-10

  • 分类号H01L23/495;H01L27/088;H01L25/065;H01L23;

  • 国家 US

  • 入库时间 2022-08-21 12:57:06

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