首页> 外国专利> Pixel structure comprising a pixel electrode having block-shaped portion and branch-shaped portion formed over a passivation layer having branch-shaped portion and block-shaped portion

Pixel structure comprising a pixel electrode having block-shaped portion and branch-shaped portion formed over a passivation layer having branch-shaped portion and block-shaped portion

机译:包括具有块状部分和分支状部分的像素电极的像素结构,该像素电极形成在具有分支状部分和块状部分的钝化层上

摘要

A pixel structure includes a substrate, an opposite substrate, a scan line and a data line, an active device, a pixel electrode, and a passivation layer. The pixel electrode has at least one block-shaped electrode and a plurality of first branch electrodes. The passivation layer has at least one block-shaped protrusion pattern, a plurality of branch protrusion patterns, and a plurality of grooves. The first branch electrodes are located on the block-shaped protrusion patterns. An Edge of the block-shaped electrodes further extends to the block-shaped protrusion patterns. An orthogonal projection gap W1 is between an orthogonal projection edge of the block-shaped electrode and an orthogonal projection edge of the nearest first branch electrode, and 0 μmW1≦5 μm. An orthogonal projection distance W2 is between the orthogonal projection edge of the block-shaped electrode and an orthogonal projection edge of the block-shaped protrusion pattern, and 0 μmW2≦10 μm.
机译:像素结构包括基板,相对基板,扫描线和数据线,有源器件,像素电极和钝化层。像素电极具有至少一个块状电极和多个第一分支电极。钝化层具有至少一个块状突起图案,多个分支突起图案和多个凹槽。第一分支电极位于块状突起图案上。块状电极的边缘进一步延伸到块状突起图案。正交投影间隙W 1 位于块状电极的正交投影边缘与最近的第一分支电极的正交投影边缘之间,且为0μm 1 ≤5μm。正交投影距离W 2 在块状电极的正交投影边缘与块状突起图案的正交投影边缘之间,并且为0μm 2 >≤10μm。

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