MEMORIES INCLUDING MULTIPLE ARRAYS OF NON-VOLATILE MEMORY CELLS SELECTIVELY CONNECTED TO SENSE CIRCUITRY USING DIFFERENT NUMBERS OF DATA LINES

摘要

Memories include first and second arrays of non-volatile memory cells, a first plurality of data lines containing a first number of data lines selectively connected to respective subsets of the first array of non-volatile memory cells, a second plurality of data lines containing a second number of data lines, less than the first number, selectively connected to respective subsets of the second array of non-volatile memory cells, and sense circuitry selectively connected to the first and second pluralities of data lines. The memories are configured, when reading the second array of non-volatile memory cells, to connect the sense circuitry to each data line of the second plurality of data lines, and the memories are configured, when reading the first array of non-volatile memory cells, to connect the sense circuitry to a number of data lines of the first plurality of data lines equal to the second number.