METHOD FOR SPATIALLY RESOLVING SERIES RESISTANCE OF A SEMICONDUCTOR STRUCTURE

摘要

A method for spatially determining the series resistance of a semiconductor structure by generating luminescent radiation in the semiconductor structure under measurement conditions A and B, by determining a local calibration parameter CV,i for a plurality of prescribed locations of the semiconductor structure and determining local series resistances RS,i for a plurality of prescribed locations of the semiconductor structure. It is essential that the local series resistances RS,i are each determined as a function of a global series resistance RSg of the semiconductor structure that is identical for all local series resistances.