首页> 外国专利> POROUS SILICON FROM METAL-SILICON ALLOY AND PROCESS FOR ITS MANUFACTURE.

POROUS SILICON FROM METAL-SILICON ALLOY AND PROCESS FOR ITS MANUFACTURE.

机译:金属硅合金中的多孔硅及其制造工艺。

摘要

The present invention relates to porous Si structure obtained from etching of metal-Si alloy and a process for production of porous silicon from metal-Si alloy. Importantly, the simple and cost effective process for production of porous Silicon provides porous Si powder with high specific area and porosity, wherein the process starts from metal-Si alloy containing more than 30% silicon. Advantageously, the proposed process provides a high throughput industrially scalable route that can produce porous silicon of desired purity grade satisfying specific application requirements. By using Metal-Si alloy containing Si more than 30% leading to higher yield by minimizing material losses. The porous Si can find industrial applications such as solar cell, biosensors, tissue engineering, medical therapeutics and diagnostics, drug delivery, rechargeable batteries, materials for energy applications, photonics, and MEMS (Micro Electro Mechanical Systems) and the likes. Advantageously also, the process for producing porous silicon can also be utilized for hydrogen gas generation also.
机译:本发明涉及通过蚀刻金属-硅合金获得的多孔硅结构以及由金属-硅合金生产多孔硅的方法。重要的是,用于生产多孔硅的简单且成本有效的方法提供了具有高比表面积和孔隙率的多孔硅粉末,其中该方法始于包含超过30%硅的金属-硅合金。有利地,所提出的方法提供了高产量的工业可扩展路线,该路线可以生产满足特定应用要求的期望纯度等级的多孔硅。通过使用含硅量超过30%的金属-硅合金,可通过最大程度地减少材料损失来提高产量。多孔Si可以找到工业应用,例如太阳能电池,生物传感器,组织工程,医学治疗和诊断,药物输送,可再充电电池,用于能量应用的材料,光子学和MEMS(微机电系统)等。同样有利地,用于生产多孔硅的方法也可以用于产生氢气。

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