Method of producing a multilayer magnetoelectronic device and magnetoelectronic device

摘要

The invention relates to a method of producing a multilayer magnetoelectronic device and to a corresponding multilayer magnetoelectronic device. The method comprises depositing a multilayer structure (10) including at least two ferromagnetic layers (1) disposed one on top of the other and each having a magnetic anisotropy with a corresponding magnetic moment. Each two adjacent ferromagnetic layers (1) of these ferromagnetic layers (1) are separated by a respective nonmagnetic layer (8). Each of the ferromagnetic layers (1) is deposited at a respective azimuthal angle with respect to a reference direction (5) and at a nonzero angle of incidence with respect to a direction (4) perpendicular to the plane of extension of the respective ferromagnetic layer (1), such that the respective ferromagnetic layer (1) exhibits uniaxial magnetic anisotropy. A magnetization curve is specified for the magnetoelectronic device (10). Then the number of ferromagnetic layers (1) and, for each of the ferromagnetic layers (1), the magnetic moment and the magnetic hardness for obtaining the specified magnetization curve are determined. For each of the ferromagnetic layers (1) a magnetic material, a thickness, an azimuthal angle and an angle of incidence are determined for obtaining the determined magnetic moment and magnetic hardness of the respective ferromagnetic layer (1). Finally, the multilayer structure (10) is deposited using the determined material, thickness, azimuthal angle and angle of incidence for each of the ferromagnetic layers (1).