首页> 外国专利> COLLOIDAL SILICA GROWTH INHIBITOR AND ASSOCIATED METHOD AND SYSTEM

COLLOIDAL SILICA GROWTH INHIBITOR AND ASSOCIATED METHOD AND SYSTEM

机译:胶态二氧化硅生长抑制剂及相关方法和系统

摘要

A technique to inhibit the growth of colloidal silica deposits on surfaces treated in phosphoric acid is described. In one embodiment, the disclosed techniques include the use of a colloidal silica growth inhibitor as an additive to a phosphoric acid solution utilized for a silicon nitride etch. In some embodiments, the additive may have chemistry that may contain strong anionic groups. A method and apparatus is provided that monitors the silica concentration and/or the colloidal silica growth inhibitor concentration in the phosphoric acid solution during processing and adjusts the amount of those components as needed. Techniques are provided for a method and apparatus to control the additive concentration to be used as well as the silica concentration in the phosphoric acid solution. The techniques described herein provide a high selectivity etch of silicon nitride towards silicon dioxide without the growth of colloidal silica deposits on the exposed surfaces.
机译:描述了抑制在磷酸处理的表面上的胶态二氧化硅沉积物的生长的技术。在一实施例中,所揭示的技术包括使用胶态二氧化硅生长抑制剂作为用于氮化硅蚀刻的磷酸溶液的添加剂。在一些实施方案中,添加剂可以具有可以包含强阴离子基团的化学性质。提供了一种方法和设备,其在加工过程中监测磷酸溶液中的二氧化硅浓度和/或胶态二氧化硅生长抑制剂的浓度,并根据需要调节那些组分的量。提供了用于控制方法和设备的技术,以控制所使用的添加剂浓度以及磷酸溶液中的二氧化硅浓度。本文所述的技术提供了对二氧化硅的氮化硅的高选择性蚀刻,而在暴露的表面上没有胶态二氧化硅沉积物的生长。

著录项

  • 公开/公告号SG11201808542WA

    专利类型

  • 公开/公告日2018-10-30

    原文格式PDF

  • 申请/专利权人 TOKYO ELECTRON LIMITED;

    申请/专利号SG20181108542W

  • 发明设计人 ROTONDARO ANTONIO L.;PRINTZ WALLACE P.;

    申请日2017-03-24

  • 分类号C09K13/04;C09K13/06;

  • 国家 SG

  • 入库时间 2022-08-21 12:49:19

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