A two-dimensional sheath layer numerical simulation method and system for dual-frequency capacitively coupled plasma etching. The method comprises the steps: using cylindrical coordinates (r, z) to create an axial symmetry model of a two-dimensional sheath layer; using a flux continuity equation, a momentum conservation equation and a Poisson equation to create a fluid model of the two-dimensional sheath layer; respectively performing fluid difference solving and Monte Carlo solving according to an input sheath layer parameter, the axial symmetry model of the two-dimensional sheath layer and the fluid model of the two-dimensional sheath layer to obtain a solving resu and performing drawing according to the solving result. The method and system have the following advantages: a two-dimensional sheath layer model is created using a fluid mechanics method, and by exploring the two-dimensional sheath layer model, it is possible to quantitatively obtain a relationship between a plasma radial density and ion energy, and this contributes to the optimization of plasma density distribution, for example, by changing a cavity structure, a process parameter, etc. the uniformity of ion energy distribution is improved, thereby improving the uniformity of etching and reducing the phenomenon of bypass.
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