首页> 外国专利> GAS BARRIER MEMBRANE, GAS BARRIER FILM USING SAME, ELECTRONIC DEVICE USING SAID GAS BARRIER MEMBRANE OR SAID GAS BARRIER FILM, AND PRODUCTION METHOD FOR GAS BARRIER MEMBRANE

GAS BARRIER MEMBRANE, GAS BARRIER FILM USING SAME, ELECTRONIC DEVICE USING SAID GAS BARRIER MEMBRANE OR SAID GAS BARRIER FILM, AND PRODUCTION METHOD FOR GAS BARRIER MEMBRANE

机译:气体屏障膜,使用相同的气体屏障膜,使用通用气体屏障膜或通用气体屏障膜的电子设备以及用于气体屏障膜的生产方法

摘要

The present invention provides a means with which a gas barrier membrane can satisfy both excellent bending properties and high water-vapor barrier properties in a high-temperature, high-humidity environment. The present invention relates to a gas barrier membrane having a region (a) that satisfies the following expression (1) and the following expression (2) when the composition is represented by M1M2xNy in the atomic composition distribution profile obtained when an XPS composition analysis is performed in the thickness direction. M1M2xNy Expression (1): 0.2 ≤ x ≤ 3.0 Expression (2): 0.6 ≤ y ≤ 1.4 x: Abundance ratio of transition metal M2 atoms with respect to non-transition metal M1 atoms y: Abundance ratio of nitrogen atoms with respect to non-transition metal M1 atoms
机译:本发明提供了一种在高温高湿环境下气体阻隔膜能够同时满足优异的弯曲性能和高水蒸气阻隔性能的装置。阻气膜技术领域本发明涉及具有以M1M2 x N y表示的组成时满足下式(1)和下式(2)的区域(a)的阻气膜。沿厚度方向进行XPS组成分析时获得的原子组成分布曲线中的。 M1M2 x N y 表达式(1):0.2≤x≤3.0表达式(2):0.6≤y≤1.4 x:过渡金属M2原子相对于非过渡金属M1原子y:氮原子相对于非过渡金属M1原子的丰度比

著录项

  • 公开/公告号WO2018021021A1

    专利类型

  • 公开/公告日2018-02-01

    原文格式PDF

  • 申请/专利权人 KONICA MINOLTA INC.;

    申请/专利号WO2017JP25316

  • 发明设计人 MORI TAKAHIRO;

    申请日2017-07-11

  • 分类号C23C14/06;B32B9;C23C14/08;C23C16/42;

  • 国家 WO

  • 入库时间 2022-08-21 12:46:09

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