首页> 外国专利> ULTRA-LOW-POWER DESIGN MEMORY POWER REDUCTION SCHEME

ULTRA-LOW-POWER DESIGN MEMORY POWER REDUCTION SCHEME

机译:超低功耗设计存储功率降低方案

摘要

The disclosure generally relates to a memory power reduction scheme that can flexibly transition memory blocks among different power states to reduce power consumption (especially with respect to leakage power) in a manner that balances tradeoffs between reduced power consumption and performance impacts. For example, according to various aspects, individual memory blocks may be associated with an access-dependent age, whereby memory blocks that are not accessed may be periodically aged. As such, in response to the age associated with a memory block crossing an appropriate threshold, the memory block may be transitioned to a power state that generally consumes less leakage power and has a larger performance penalty. Furthermore, one or more performance-related criteria may be defined with certain memory blocks to prevent and/or automatically trigger a transition to another power state.
机译:本公开总体上涉及一种存储器功率降低方案,该存储器功率降低方案可以以平衡降低的功率消耗与性能影响之间的折衷的方式灵活地在不同功率状态之间转换存储器块以降低功率消耗(特别是关于泄漏功率)。例如,根据各个方面,可以将各个存储块与依赖于访问的年龄相关联,由此可以将未被访问的存储块定期地进行老化。这样,响应于与存储块越过适当的阈值相关联的寿命,该存储块可以被转换到通常消耗较少的泄漏功率并且具有较大的性能损失的功率状态。此外,可以用某些存储块来定义一个或多个与性能有关的标准,以防止和/或自动触发到另一电源状态的转变。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号