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InN TUNNEL JUNCTION CONTACTS FOR P-CHANNEL GaN
InN TUNNEL JUNCTION CONTACTS FOR P-CHANNEL GaN
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机译:P通道GaN的InN隧道结触点
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摘要
Methods and apparatus for semiconductor manufacture are disclosed. An example apparatus includes a Gallium Nitride (GaN) substrate; a p-type GaN region positioned on the GaN substrate; a p-type Indium Nitride (InN) region positioned on the GaN substrate and sharing an interface with the p-type GaN region; and a n-type Indium Gallium Nitride (InGaN) region positioned on the GaN substrate and sharing an interface with the p-type InN region.
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