FINFET TRANSISTOR WITH CHANNEL STRESS INDUCED VIA STRESSOR MATERIAL INSERTED INTO FIN PLUG REGION ENABLED BY BACKSIDE REVEAL

摘要

An integrated circuit apparatus including a body; a transistor formed on a first portion of the body, the transistor including a gate stack and a channel defined in the body between a source and a drain; and a plug formed in a second portion of the body, the plug including a material operable to impart a stress on the first portion of the body. A method of forming an integrated circuit device including forming a transistor body on a substrate; forming a transistor device in a first portion of the transistor body on a first side of the substrate; and dividing the transistor body into at least the first portion and a second portion with a plug in the transistor body, the plug including a material operable to impart a stress on the first portion of the body, wherein the material is introduced through a second side of the substrate.