METHOD FOR PREPARING GAAS/GE/GAAS HETEROGENEOUS SPIN DIODE APPLIED TO ANNULAR ANTENNA

摘要

A method for preparing a GaAs/Ge/GaAs heterogeneous SPiN diode applied to an annular antenna, comprising: selecting a GeOI substrate (101); etching a top layer Ge layer of the GeOI substrate (101) to form a first trench and a second trench in the top layer Ge layer; depositing a GaAs material (1001) in the first trench and the second trench; using an ion implantation process to perform P-type ion implantation on the GaAs material (1001) in the first trench, so as to form a P-type active region (1301), and performing N-type ion implantation on the GaAs material (1001) in the second trench to form an N-type active region (1302); and forming lead holes (1601) on the surfaces of the P-type active region (1301) and the N-type active region (1302) and performing metal sputtering to form a GaAs/Ge/GaAs heterogeneously structured SPiN diode.