WRAP-AROUND GATE STRUCTURES AND METHODS OF FORMING WRAP-AROUND GATE STRUCTURES

摘要

A semiconductor device includes a channel structure that includes a first oxide layer, a second oxide layer, and a channel region between the first oxide layer and the second oxide layer. The semiconductor device includes a first gate structure proximate to at least three sides of the channel structure. The semiconductor device includes a second gate structure proximate to at least a fourth side of the channel structure.