A single-chip double-axis magneto-resistance angle sensor comprises a substrate (1) on an X-Y plane, and a magneto-resistance angle sensor (2) in a push-pull X axis and a magneto-resistance angle sensor (3) in a push-pull Y axis both located on the substrate. The magneto-resistance angle sensor (2) in a push-pull X axis comprises an X push arm and an X pull arm, and the magneto-resistance angle sensor (3) in a push-pull Y axis comprises a Y push arm and a Y pull arm, each of the X push arm, the X pull arm, the Y push arm and Y pull arm comprises at least one magneto-resistance angle sensing unit array. Magnetic field sensing directions of the magneto-resistance angle sensing unit arrays of the X push arm, the X pull arm, the Y push arm and the Y pull arm are along +X, -X, +Y and -Y directions respectively. Each magneto-resistance angle sensing unit (20) comprises a TMR/GMR spin valve of the same magnetic multi-layer film structure, a magnetization direction of an anti-ferromagnetic layer is obtained by laser program-control heating magnetic annealing, and a magnetic field attenuation layer can be deposited in the surface of the magneto-resistance angle sensing unit (20).
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