首页> 外国专利> MAGNETO-IMPEDANCE (MI) SENSORS EMPLOYING CURRENT CONFINEMENT AND EXCHANGE BIAS LAYER(S) FOR INCREASED SENSITIVITY

MAGNETO-IMPEDANCE (MI) SENSORS EMPLOYING CURRENT CONFINEMENT AND EXCHANGE BIAS LAYER(S) FOR INCREASED SENSITIVITY

机译:磁阻抗(MI)传感器采用电流限制并交换偏置层以提高灵敏度

摘要

Magneto-impedance (MI) sensors employing current confinement and exchange bias layer(s) for increased MI sensitivity are disclosed. MI sensors may be used as biosensors to detect biological materials. The sensing by the MI devices is based on a giant magneto-impedance (GMI) effect, which is very sensitive to a magnetic field. The GMI effect is a change in impedance of a magnetic material resulting from a change in skin depth of the magnetic material as a function of an external direct current (DC) magnetic field applied to the magnetic material and an alternating current (AC) current flowing through the magnetic material (or adjacent conductive materials). Thus, this change in impedance resulting from a magnetic stray field generated by magnetic nanoparticles can be detected in lower concentrations and measured to determine the amount of magnetic nanoparticles present, and thus the target analyte of interest.
机译:公开了采用电流限制和交换偏置层以提高MI灵敏度的磁阻(MI)传感器。 MI传感器可以用作检测生物材料的生物传感器。 MI设备的感应基于巨磁阻抗(GMI)效应,该效应对磁场非常敏感。 GMI效应是由磁性材料的趋肤深度变化引起的磁性材料阻抗变化,该变化是施加到磁性材料的外部直流(DC)磁场和交流(AC)电流的函数通过磁性材料(或相邻的导电材料)。因此,可以以较低的浓度检测由磁性纳米颗粒产生的杂散磁场导致的阻抗变化,并进行测量以确定存在的磁性纳米颗粒的量,从而确定目标目标分析物的量。

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