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SPIN-CURRENT MAGNETIZATION REVERSAL ELEMENT, MAGNETORESISTIVE ELEMENT, AND MAGNETIC MEMORY
SPIN-CURRENT MAGNETIZATION REVERSAL ELEMENT, MAGNETORESISTIVE ELEMENT, AND MAGNETIC MEMORY
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机译:自旋磁化反转元件,磁阻元件和磁存储器
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摘要
This spin-current magnetization reversal element is provided with: a first ferromagnetic metal layer of which a magnetization direction varies; and a spin orbit torque wiring which extends in a second direction intersecting a first direction perpendicular to the plane of the first ferromagnetic metal layer, and which is bonded to the first ferromagnetic metal layer. The spin orbit torque wiring has a structure in which a spin conduction layer bonded to the first ferromagnetic metal layer and a spin generation layer which is bonded to the spin conduction layer and bonded to an opposite surface of the first ferromagnetic metal layer are stacked.
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