PLASMA ETCHING APPARATUS FOR METAL THIN FILM AND PLASMA ETCHING METHOD FOR METAL THIN FILM

摘要

A plasma etching apparatus for a metal thin film comprises: a process chamber to provide a processing space in which a plasma etching process is performed; a support unit which is arranged in the processing space, and supports a target body; a gas supply unit which is connected to the process chamber, and supplies process gas to the processing space; a linear ECR plasma source module which is arranged on an upper portion of the process chamber, and changes the process gas supplied in the processing space to plasma; and a radiation beam source module which is arranged on an upper portion of the linear ECR plasma source module, and emits a radiation beam towards the target body to gasify etching byproducts produced during the plasma etching process. A plasma etching method for a metal thin film includes a step of discharging etching byproducts gasified after being produced in a plasma etching process to the outside of the process chamber.;COPYRIGHT KIPO 2018