NAND FLASH MEMORY CONTROLLER USING COMPRESSION RATE AND NAND FLASH MEMORY STORING METHOD USING THE SAME

摘要

The present invention relates to a NAND flash memory controller using a compression rate and a NAND flash memory storage method using the same. According to the present invention, the NAND flash memory storage method using the NAND flash memory controller comprises: a step of calculating a compression rate of input data; a step of calculating a code rate of original data by using the calculated compression rate and a plurality of predetermined threshold ranges; a step of determining the number of bits of an error correction code depending on the code rate; a step of generating an error correction code by the determined bit number; a step of generating compression data by compressing original data depending on the calculated compression rate; and a step of combining the generated error correction code with the compression data and storing the combined data in a NAND flash memory. Like the above, the present invention can improve the error correction ability and stability of data stored in the NAND flash memory by increasing the number of bits capable of being allocated to an error correction code through data lossless compression technique.