首页> 外国专利> - - - ON-DIE TERMINATION CIRCUIT DATA OUTPUT BUFFER SEMICONDUCTOR MEMORY DEVICE MEMORY MODULE METHOD OF OPERATING AN ON-DIE TERMINATION CIRCUIT METHOD OF OPERATING A DATA OUTPUT BUFFER AND METHOD OF TRAINING ON-DIE TERMINATION

- - - ON-DIE TERMINATION CIRCUIT DATA OUTPUT BUFFER SEMICONDUCTOR MEMORY DEVICE MEMORY MODULE METHOD OF OPERATING AN ON-DIE TERMINATION CIRCUIT METHOD OF OPERATING A DATA OUTPUT BUFFER AND METHOD OF TRAINING ON-DIE TERMINATION

机译:芯片上终止电路数据输出缓冲器半导体存储器器件模块的操作方法芯片上终止电路操作数据输出缓冲器的方法和训练芯片终止存储器的方法

摘要

The on-die termination circuit of the semiconductor memory device includes a termination resistance portion and a switching control portion. The termination resistor portion is connected to the external pin and provides a termination resistance to the transmission line connected to the external pin. The switching control section is connected to the terminal resistance section and adjusts the resistance value of the terminal resistance in response to the asynchronous control signal not synchronized with the external clock signal. The on-die termination circuit may be controlled asynchronously to reduce power consumption by turning off the clock synchronization circuit.
机译:半导体存储装置的芯片上终端电路包括终端电阻部分和开关控制部分。终端电阻器部分连接到外部引脚,并为连接到外部引脚的传输线提供终端电阻。开关控制部分连接到端子电阻部分,并且响应于与外部时钟信号不同步的异步控制信号来调节端子电阻的电阻值。可以通过关闭时钟同步电路来异步控制管芯上终端电路以降低功耗。

著录项

  • 公开/公告号KR101789077B1

    专利类型

  • 公开/公告日2017-11-20

    原文格式PDF

  • 申请/专利权人 삼성전자주식회사;

    申请/专利号KR20100016167

  • 发明设计人 전영진;

    申请日2010-02-23

  • 分类号G11C7/10;G11C7/22;

  • 国家 KR

  • 入库时间 2022-08-21 12:41:37

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