GaN POWER TRANSISTOR PACKAGE WITH INTEGRATED INTERNAL MATCHING AND INTERNAL COUPLING STRUCTURES BY USING CERAMIC TECHNOLOGY

摘要

A GaN power transistor package integrated with internal matching and internal coupling structures by using a ceramic technology. According to an embodiment of the present invention, the GaN power transistor package couples to a plurality of barechips inside a metal package by using a multi-layered ceramic technology, and performs impedance matching so as to perform a high output. Therefore, a high output can be performed in a single package, and various packages can be easily connected in series and in parallel since additional impedance matching is unnecessary in the outside.;COPYRIGHT KIPO 2018