Methods for improving the film-in-particle performance of amorphous boron-carbon hard mask processes in PECVD systems

摘要

Implementations of the present disclosure generally relate to the manufacture of integrated circuits. More particularly, the implementations described herein provide techniques for depositing boron-containing amorphous carbon films on a substrate while reducing particle contamination. In one implementation, the method comprises: flowing a hydrocarbon-containing gas mixture into a processing volume in which a substrate is positioned; Flowing a boron-containing gas mixture into the processing volume; Stabilizing the pressure in the processing volume for a predefined RF-on delay time period; Generating an RF plasma in the processing volume after a predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate; Exposing the processing volume of the process chamber to a dry cleaning process; And depositing an amorphous boron season layer over at least one surface in the processing volume of the process chamber.;