ELECTRONIC DEVICE COMPRISING INTERLAYER WITH GRAPHINE QUANTUM DOT AND METHOD FOR FABRICATING THE SAME

摘要

The present invention relates to an electronic device including: a first electrode; a hole transport layer located on the first electrode; a single or a plurality of interlayers located on the hole transport layer and including graphene quantum dots (N-CD); any one conversion layer located on the interlayer, including a quantum dot (QD), and selected from a group composed of an all-light conversion layer (light emitting layer) and a photoelectric conversion layer; an electron transport layer located on the conversion layer; and a second electrode located on the electron transport layer, and more particularly, to an electronic device capable of easily absorbing energy and moving a charge in a light emitting layer or a photoelectric conversion layer using one active layer and an active layer manufacturing method to cause a fluorescent resonance energy transfer and reduce an interfacial energy barrier through the control of a work function and a selective band gap of an interlayer, and a manufacturing method thereof.