NAND ULTRAHIGH DENSITY VERTICAL NAND MEMORY DEVICE AND METHOD OF MAKING THEREOF

摘要

The monolithic three-dimensional NAND strings include a semiconductor channel, at least one end portion of the semiconductor channel extending substantially perpendicular to the main surface of the substrate, a plurality of control gate electrodes having a strip shape extending substantially parallel to the main surface of the substrate, A blocking dielectric comprising a plurality of blocking dielectric segments, a plurality of discrete charge storage segments, and a tunnel dielectric disposed between each of the plurality of discrete charge storage segments and the semiconductor channel.