首页> 外国专利> ELIMINATION OF 3D PARASITIC EFFECTS ON MICROPHONE POWER SUPPLY REJECTION

ELIMINATION OF 3D PARASITIC EFFECTS ON MICROPHONE POWER SUPPLY REJECTION

机译:消除了麦克风电源抑制中的3D寄生效应

摘要

Comprising a first node having a substantially equivalent 3D parasitic capacitance with respect to the preamplifier of the microphone package and a second node, such that any noise generated for the first node is equivalent to any noise generated for the second node, A microphone package is described. An external power source is connected to the first node and provides a bias voltage signal to the MEMS microphone package through the first node. The inverting amplifier is connected between the power supply and the second node. The third node is connected to the first node via a packaging parasitic capacitor, while the second node is coupled to the third node through an intended parasitic capacitor or an apparent capacitor. The noise coupled to the third node from the external power source is then canceled by summing the inverse power noise to the third node.
机译:包括相对于麦克风封装的前置放大器具有基本上等效的3D寄生电容的第一节点和第二节点,以使得为第一节点产生的任何噪声都等于为第二节点产生的任何噪声,描述了一种麦克风封装。 。外部电源连接到第一节点,并通过第一节点将偏置电压信号提供给MEMS麦克风封装。反相放大器连接在电源和第二节点之间。第三节点通过封装寄生电容器连接到第一节点,而第二节点通过预期的寄生电容器或视在电容器耦合到第三节点。然后,通过将反向功率噪声加到第三节点,可以消除从外部电源耦合到第三节点的噪声。

著录项

  • 公开/公告号KR101824939B1

    专利类型

  • 公开/公告日2018-02-02

    原文格式PDF

  • 申请/专利权人 로베르트 보쉬 게엠베하;

    申请/专利号KR20167021702

  • 发明设计人 무자 존 엠.;지스코 앤서니;

    申请日2014-12-18

  • 分类号H04R3/06;G10K11;H04R19;H04R23;

  • 国家 KR

  • 入库时间 2022-08-21 12:38:31

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