SILICON SINGLE CRYSTAL DOPED WITH GALLIUM INDIUM OR ALUMINUM

摘要

There is disclosed a method for preparing a doped silicon single crystal and one or a series of doped silicon crystals having a resistance change of 10% or less along the longitudinal axis and / or the radial axis. The method comprises the steps of providing a molten material containing silicon into a continuous Czochralski crystal growth apparatus, transporting a dopant such as gallium, indium, or aluminum to the molten material, Providing seed crystals into the molten material and evolving the doped silicon single crystal by evacuating the seed crystals from the molten material. Additional molten material is provided to the device during the growth phase. A doping model for calculating the amount of dopant to be carried into the molten material during one or more doping events, a method for conveying the dopant, a container and a container used to convey the dopant are also disclosed.