Storage node comprising free magnetic layer of in-plane magnetic anisotropy material magnetic memory device comprising the same and method of manufacturing the same

摘要

Discloses a magnetic memory device including a perpendicular magnetic anisotropic material and a method of manufacturing the same. A storage node of a magnetic memory device according to an embodiment of the present invention includes a lower magnetic layer, a tunnel barrier formed on the lower magnetic layer, and a free layer formed on the tunnel barrier and having a magnetization direction switched by a spin current. The free layer comprises a layer of perpendicularly anisotropic material and has a cap structure that wraps around a layer of material formed beneath it.