首页> 外国专利> METHOD FOR EVALUATING QUALITY OF OXIDE SEMICONDUCTOR THIN FILM AND LAMINATED BODY HAVING PROTECTIVE FILM ON SURFACE OF OXIDE SEMICONDUCTOR THIN FILM AND METHOD FOR MANAGING QUALITY OF OXIDE SEMICONDUCTOR THIN FILM

METHOD FOR EVALUATING QUALITY OF OXIDE SEMICONDUCTOR THIN FILM AND LAMINATED BODY HAVING PROTECTIVE FILM ON SURFACE OF OXIDE SEMICONDUCTOR THIN FILM AND METHOD FOR MANAGING QUALITY OF OXIDE SEMICONDUCTOR THIN FILM

机译:评估氧化物半导体薄膜表面上具有保护膜的氧化物半导体薄膜和层叠体的质量的方法以及管理氧化物半导体薄膜的质量的方法

摘要

Provided is a method for accurately and easily evaluating the quality of a laminate having an oxide semiconductor thin film and a protective film on the surface of the oxide semiconductor thin film, and a method for controlling quality of an oxide semiconductor thin film. The present invention relates to a method for evaluating the quality of a laminate having an oxide semiconductor thin film and a protective film on the surface of the oxide semiconductor thin film. The oxide semiconductor thin film is formed on a substrate and then the electronic state of the oxide semiconductor thin film is contact- The method comprising: a first step of evaluating a defect caused by an in-film defect of the oxide semiconductor thin film by measuring a defect of the oxide semiconductor thin film on the surface of the oxide semiconductor thin film processed by the conditions determined based on the evaluation; And a second step of evaluating a defect caused by an interface defect between the oxide semiconductor thin film and the protective film by measuring an electronic state of the oxide semiconductor thin film by a method or a non-contact method.
机译:提供了一种用于准确且容易地评估在氧化物半导体薄膜的表面上具有氧化物半导体薄膜和保护膜的层压体的质量的方法,以及用于控制氧化物半导体薄膜的质量的方法。本发明涉及评价在氧化物半导体薄膜的表面具有氧化物半导体薄膜和保护膜的层叠体的品质的方法。在衬底上形成氧化物半导体薄膜,然后使氧化物半导体薄膜的电子状态接触。该方法包括:第一步,通过测量来评估由氧化物半导体薄膜的膜内缺陷引起的缺陷。在根据评估确定的条件下处理的氧化物半导体薄膜表面上的氧化物半导体薄膜的缺陷;第二步骤是通过通过方法或非接触方法测量氧化物半导体薄膜的电子状态来评估由氧化物半导体薄膜和保护膜之间的界面缺陷引起的缺陷。

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