VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY SWITCHING DEVICE USING AN EXTERNAL FERROMAGNETIC BIASING FILM

摘要

Embodiments of the present invention are directed to a voltage controlled magnetic anisotropy (VCMA) switching device using an external ferromagnetic biasing film. Aspects of the present invention provide magnetoresistive random access memory (MRAM) devices. An MRAM device is generally a substrate, at least one magnetic tunnel junction (MTJ) stack disposed on a substrate, having a tunnel barrier layer between a first ferromagnetic layer with fixed magnetization and a second ferromagnetic layer with non- And a magnet disposed adjacent to the second ferromagnetic layer.