首页>
外国专利>
Voltage-controlled magnetic anisotropy switching device using an external ferromagnetic biasing film
Voltage-controlled magnetic anisotropy switching device using an external ferromagnetic biasing film
展开▼
机译:使用外部铁磁偏置膜的压控磁各向异性开关装置
展开▼
页面导航
摘要
著录项
相似文献
摘要
Aspects of the present disclose related to a voltage-controlled magnetic anisotropy (VCMA) switching device using an external ferromagnetic biasing film. Aspects of the present disclose provide for a magnetoresistive random access memory (MRAM) device. The MRAM device generally includes a substrate, at least one magnetic tunnel junction (MTJ) stack disposed on the substrate, wherein the MTJ stack comprises a tunnel barrier layer between a first ferromagnetic layer having a fixed magnetization and a second ferromagnetic layer having unfixed magnetization, and a magnet disposed adjacent to the second ferromagnetic layer.
展开▼