According to the present invention, provided is an IGBT gate driver which includes: a first driver having an output terminal connected to a base electrode of a first transistor included in a current buffer part and raises a gate voltage required to drive an IGBT; a first variable resistor formed between the base electrode of the first transistor and the output terminal of the first driver, the first variable resistor being controlled by the first driver for tilt adjustment of the two-step rise of the gate voltage; a second driver having an output terminal connected to a base electrode of a second transistor included in the current buffer part to drop a gate voltage; and a second variable resistor formed between the base electrode of the second transistor and the output terminal of the second driver, the second variable resistor being controlled by the second driver for tilt adjustment of the two-step drop of the gate voltage.
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