首页> 外国专利> METHOD OF MEASUREMENT OF TEMPERATURE OF LOCAL AREAS OF SURFACE OF THE MELT IN MELTING POT WHEN GROWING MONOCRYSTALS OF SUBSTANCES WITH MELTING POINTS ABOVE 650 °C BY THE CHOKHRALSKIY METHOD

METHOD OF MEASUREMENT OF TEMPERATURE OF LOCAL AREAS OF SURFACE OF THE MELT IN MELTING POT WHEN GROWING MONOCRYSTALS OF SUBSTANCES WITH MELTING POINTS ABOVE 650 °C BY THE CHOKHRALSKIY METHOD

机译:用焦耳斯基法测定熔点大于650°C的物质的单晶生长时在熔池中熔体表面局部温度的测量方法

摘要

FIELD: measuring equipment.;SUBSTANCE: invention relates to the field of temperature measurements and relates to a method for measuring the temperature of local sections of the melt surface in a melting pot when growing monocrystals of substances with melting points above 650 °C by the Chokhralskiy method. Method includes photographing of a visible melt surface with a crystal with a digital color apparatus through the inspection window of the growth chamber, transfer of the image file to the computer, calculation of temperature for the brightness of the pixels of the three color RGB channels based on the Stefan-Boltzmann law for the density of black body radiation, setting of the known melting point of the grown crystal in the program window, calibration of the program, pointing with the cursor on the point of interest or on an area with selected small dimensions of 3 × 3, 5 × 5 or 7 × 7 pixels, within which the temperature is averaged, reading of the temperature value in the user interface window. Calibration of the program involves pointing the cursor on the point in the image of the line of contact between the crystal and the melt, the temperature in which is taken as the melting point.;EFFECT: technical result consists in increasing the accuracy of measurements and improving the structural quality of the crystals.;1 cl, 4 dwg
机译:技术领域本发明涉及温度测量领域,并且涉及一种当通过熔解法生长熔点高于650℃的物质的单晶时,测量熔炉中熔体表面局部截面温度的方法。 Chokhralskiy方法。该方法包括用数字彩色仪器通过生长室的检查窗用晶体拍摄可见的熔体表面,将图像文件传输到计算机,基于三个彩色RGB通道的像素亮度计算温度。关于黑体辐射密度的Stefan-Boltzmann定律,在程序窗口中设置生长晶体的已知熔点,程序校准,将光标指向感兴趣的点或选定小的区域3×3、5×5或7×7像素的尺寸(在其中平均温度),在用户界面窗口中读取温度值。程序的校准涉及将光标指向晶体与熔体之间的接触线图像中的点,将温度视为熔点。效果:技术成果在于提高了测量的准确性和改善晶体的结构质量。; 1 cl,4 dwg

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