METHOD FOR FORMING A SYNAPTIC MEMRISTOR BASED ON A NANOCOMPOSITE OF METAL-NONSTECHOMETRIC OXIDE

摘要

FIELD: electrical engineering.;SUBSTANCE: invention relates to the field of micro- and nanoelectronics, namely the manufacturing technology of a synaptic memristor based on the metal-non-stoichiometric oxide nanocomposite, which has adaptive (neuromorphic) properties. Method for the formation of a synaptic memristor based on a metal-non-stoichiometric oxide nanocomposite is proposed, consisting in successive deposition of layers on a substrate. At the same time, the Cr/Cu/Cr layer, which is the lower electrode, the metal-non-stoichiometric oxide nanocomposite layer and the Cr/Cu/Cr layer, which is the upper electrode, are sequentially deposited on the glass-ceramic substrates by ion-beam sputtering method. In the metal-non-stoichiometric oxide nanocomposite, the ferroelectric material LiNbO₃ is used as oxide, and the amorphous alloy Co₄₀Fe₄₀B₂₀ – as the metal. Deposition of the metal-non-stoichiometric oxide nanocomposite is carried out with a lack of oxygen 2.5–3.5 mcm in thickness and with a metal content of 2–4 at.% below the percolation threshold x_p ≈ 15 at.% on substrates having a room temperature.;EFFECT: creation of memristive structures Cr/Cu/Cr/(Co₄₀Fe₄₀B₂₀)_x(LiNbO_3-y)_100-x/Cr/Cu/Cr using non-stoichiometric oxides capable of simulating the properties of biological synapses and simultaneously possessing increased resistance to cyclic resistive switching.;5 cl, 6 dwg