A technique for reducing plasma induced etch damage during the fabrication of vias in interlayer dielectrics

摘要

A method comprising: forming a first conductive charge balance layer (211, 211a) over a dielectric layer (206) of a metallization structure (212) of a microstructure device (200), the first charge balance layer (211, 211a) connecting laterally adjacent regions of the dielectric layer (206) and wherein each of the regions receives an opening therein for receiving a conductive material therein, the first conductive charge balance layer (211, 211a) comprising a conductive polymer material; Forming an antireflective coating (207) over the first conductive charge balance layer (211, 211a); and performing a plasma enhanced etching process to form the openings using the first conductive charge balance layer (211, 211a).