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A method for securely erasing a nonvolatile semiconductor mass storage, computer system and computer program product

机译:一种安全擦除非易失性半导体大容量存储器的方法,计算机系统和计算机程序产品

摘要

Method (V) for safely erasing a nonvolatile semiconductor mass memory (HMS) having a plurality of physical memory units that are connected either to a first memory area (SB1) that can be addressed via an interface (SS) of the semiconductor mass memory (HMS) or via the interface ( SS) associated with non-addressable second memory area (SB2), and a controller (CNT) adapted to receive, upon receipt of a command to overwrite memory units associated with the first memory area (SB1) via the interface (SS) to change to the first memory area (SB1) and the second memory area (SB2) according to an algorithm for producing a wear compensation, comprising the steps of: - marking the entire addressable first memory area (SB1) for erasure, the first memory area (SB1) having a metafile-less File system is formatted; sending a release note ls from an operating system or BIOS via the interface (SS) to the controller (CNT); - releasing the physical storage units associated with the first storage area (SB1) for writing by the controller (CNT) upon receipt of the release command; - sending at least a first one Write command from the operating system or BIOS via the interface (SS) to the controller (CNT) for writing the entire first memory area (SB1) to data blocks having a predetermined first bit pattern, overwriting the entire first memory area (SB1) with the first bit pattern ; and - transmitting at least one second write command from the operating system or BIOS via the interface (SS) to the controller (CNT) for overwriting at least a predetermined portion of the previously written data blocks with a second different bit pattern from the first one, according to the algorithm for Produce a wear compensation the second memory area (SB2) associated physical storage units are described.
机译:方法(V),用于安全擦除具有多个物理存储单元的非易失性半导体大容量存储器(HMS),该物理存储单元连接到可以通过半导体大容量存储器的接口(SS)寻址的第一存储区域(SB1)。 HMS)或经由与不可寻址的第二存储区域(SB2)关联的接口(SS),以及控制器(CNT),该控制器适于在接收到命令以通过以下方式覆盖与第一存储区域(SB1)关联的存储单元时进行接收根据用于产生磨损补偿的算法,将接口(SS)改变为第一存储区域(SB1)和第二存储区域(SB2),包括以下步骤:-标记整个可寻址的第一存储区域(SB1)以用于擦除,具有无图元文件的文件系统的第一存储区域(SB1)被格式化;通过接口(SS)从操作系统或BIOS向控制器(CNT)发送发行说明ls; -当接收到释放命令时,释放与第一存储区域(SB1)相关联的物理存储单元以由控制器(CNT)进行写入; -经由接口(SS)从操作系统或BIOS向控制器(CNT)发送至少第一写命令,以将整个第一存储区域(SB1)写入具有预定第一位模式的数据块,从而覆盖整个具有第一位模式的第一存储区(SB1); -经由接口(SS)从操作系统或BIOS向控制器(CNT)传输至少一个第二写入命令,以用与第一写入模式不同的第二比特模式来覆盖先前写入的数据块的至少预定部分。 ,根据用于产生磨损补偿的算法,描述了与第二存储区域(SB2)相关联的物理存储单元。

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