DEVICE AND METHOD FOR CREATING AN ACTIVE CHANNEL WITH INDIAN SIDES AND LOWER SURFACES

摘要

Transistor devices having active channels of an indium-containing ternary or higher III-V compound and processes for making the same can be formed which enable improved carrier mobility when preparing rib-shaped active channels, such as those described in Tri Gate or all-around (GAA) devices. In one embodiment, an indium-containing ternary or higher III-V compound may be deposited in narrow trenches on a reconstructed top surface of a substructure, which may result in a fin having indium-rich side surfaces and an indium-rich bottom surface. These indium-rich surfaces will strike a gate oxide of a transistor and may result in high electron mobility and improved switching speed relative to conventional homogeneous active channel compositions of an indium-containing ternary or higher III-V compound.