PROCESS FOR THE RESTORATION OF SILICON-BASED PHOTOVOLTAIC SOLAR CELLS

摘要

The treatment method of a photovoltaic element comprises at least the following steps: providing a silicon-based substrate (1) provided with at least one emitting area (1E) at the surface; generating charge carriers in the substrate (1), while keeping the substrate (1) at a temperature within a temperature range comprised between 20° C. and 230° C. and preferably between 50° C. and 230° C.; subjecting the substrate (1) to a magnetic field (B) during the charge carrier generation step, the magnetic field (B) having a component (Bc) substantially parallel to the interface (24) between the emitting area (1E) and the substrate (1).