Brief description of embodiments of the transistor a nanowire semi - conductor and comprising a grid and the spacers self - aligned

摘要

Method of implementation of a transistor (100) with a nanowire semi - conductor, comprising the steps: - produce, on a support (102), a nanowire semi - conductor having a portion (123) is covered with a grid 10 is surrounded, with the nanowire, of a dielectric layer, - remove the grid 10, forming a first space surrounded by first parts of the dielectric layer, - implant ionically a second part of the dielectric layer in the said first portion, said first parts protecting the third parts (136) of the dielectric layer, - etching said second part, forming a second space, - making a grid (140, 142) in the spaces, and a dielectric portion (148), on the gate and the first parts, - implant ionically of the fourth parts of the dielectric layer surrounding the second portions of the nanowire, the dielectric portion protecting said first and third parts, - etching said fourth parts.