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METHOD FOR MANUFACTURING A DOPANT TRANSISTOR LOCATED WITH THE GRIT APLOMB
METHOD FOR MANUFACTURING A DOPANT TRANSISTOR LOCATED WITH THE GRIT APLOMB
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机译:制造位于砂粒沉积物上的掺杂晶体管的方法
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摘要
A method is provided for forming a transistor from a stack including the following successive layers: an electrically insulating layer, an active zone including at least one semiconductor layer, and a gate, sides of which are configured to be covered by at least one spacer, the method including: a phase of forming lateral cavities; and forming a raised drain and a raised source that fill the lateral cavities by growing the semiconductor layer via epitaxy, the forming of the lateral cavities includes, after a step of partially removing the semiconductor layer: forming a sacrificial layer, partially removing the sacrificial layer; forming spacers against the sides of the gate resting on a residual sacrificial layer; and totally removing the residual sacrificial layer in order to form the lateral cavities.
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