首页> 外国专利> MONOLITHICALLY INTEGRATING POWER MULTIPOL (S) CHIP (S) OF ASYMMETRICAL CUTTING CELLS AND MULTI-PHASE POWER MODULE (S) USING SAME OR MORE OF SAID MULTIPOLE CHIPS (S)

MONOLITHICALLY INTEGRATING POWER MULTIPOL (S) CHIP (S) OF ASYMMETRICAL CUTTING CELLS AND MULTI-PHASE POWER MODULE (S) USING SAME OR MORE OF SAID MULTIPOLE CHIPS (S)

机译:使用相同或更多相同的多极芯片单片集成不对称切割电池的功率Multipol芯片和多相功率模块

摘要

A multi-power chip includes two vertically integrated switching cells (1221, 1222) laterally distributed in a semiconductor substrate (112). Each switching cell (1221, 1222) is double-partitioned by a non-through insulating wall (1241, 1242) in a first volume (1341, 1342) and a second volume (1361, 1362) respectively having a diode ( 1301, 1302) and a controlled electronic switch (1321, 1322) forming a cutting structure. Each switching cell (1221, 1222) has at the first top face (114) an electrical polarity terminal (1381, 1382) and a ground terminal (1401, 1402). Each switching cell (1221, 1222) has an integral mid-point terminal (1411, 1412) disposed below the first and second volumes and at or below and recessed from the second lower face (116). ) of the substrate (112).
机译:一种多电源芯片,包括两个垂直集成的开关单元(1221、1222),它们横向分布在半导体衬底(112)中。每个开关单元(1221、1222)由分别具有二极管(1301、1302)的第一体积(1341、1342)和第二体积(1361、1362)中的非贯通绝缘壁(1241、1242)双重分隔。 )和形成切割结构的受控电子开关(1321、1322)。每个开关单元(1221、1222)在第一顶面(114)处具有极性端子(1381、1382)和接地端子(1401、1402)。每个开关单元(1221、1222)具有一体的中点端子(1411、1412),该一体的中点端子(1411、1412)设置在第一和第二体积下方并且在第二下表面(116)处或之下并从第二下表面(116)凹进。基板(112)的)。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号