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Method of forming a crystalline or polycrystalline layer of an organic-inorganic metal halide perovskite

机译:形成有机-无机金属卤化物钙钛矿的晶体或多晶层的方法

摘要

A method of forming a crystalline or polycrystalline layer of an organic-inorganic metal halide perovskite material comprising a three-dimensional crystal structure represented by the formula AMX3, in which A represents one or more cations, including at least one of which is an organic cation, M represents at least one divalent metal cation, and X represents at least one halide anion, the method comprising the steps of: forming a first layer on the surface of a substrate, the first layer comprising an organic-inorganic halide perovskite material having a planar, layered two-dimensional crystal structure (e.g. having the form AMX4); depositing on the first layer a material comprising one or more organic halides; and reacting the first layer and the 2D crystal layer deposited thereon to form the polycrystalline layer comprising an organic-inorganic metal halide perovskite material having the formula AMX3. Also provided is an optoelectronic or photovoltaic device including an active layer comprising an organic-inorganic metal halide perovskite material comprising a three-dimensional crystal structure represented by the formula AMX3, wherein the material is obtainable using the above method.
机译:形成有机无机金属卤化物钙钛矿材料的晶体或多晶层的方法,该有机或无机金属卤化物钙钛矿材料包含由式AMX3表示的三维晶体结构,其中A表示一种或多种阳离子,其中至少一种是有机阳离子M表示至少一个二价金属阳离子,X表示至少一个卤化物阴离子,该方法包括以下步骤:在衬底的表面上形成第一层,该第一层包括有机无机卤化物钙钛矿材料。平面,分层的二维晶体结构(例如具有AMX4形式);在第一层上沉积包含一种或多种有机卤化物的材料;使第一层和沉积在其上的2D晶体层反应以形成包含具有式AMX3的有机-无机金属卤化物钙钛矿材料的多晶层。还提供了一种光电或光生伏打器件,其包括活性层,该活性层包括有机无机金属卤化物钙钛矿材料,该材料具有由式AMX3表示的三维晶体结构,其中该材料可使用上述方法获得。

著录项

  • 公开/公告号GB201815547D0

    专利类型

  • 公开/公告日2018-11-07

    原文格式PDF

  • 申请/专利权人 OXFORD PHOTOVOLTAICS LIMITED;

    申请/专利号GB20180015547

  • 发明设计人

    申请日2018-09-24

  • 分类号

  • 国家 GB

  • 入库时间 2022-08-21 12:32:21

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