首页> 外国专利> HIGH-PURITY Ni-V ALLOY, TARGET THEREFROM, HIGH-PURITY Ni-V ALLOY THIN FILM AND PROCESS FOR PRODUCING HIGH-PURITY Ni-V ALLOY

HIGH-PURITY Ni-V ALLOY, TARGET THEREFROM, HIGH-PURITY Ni-V ALLOY THIN FILM AND PROCESS FOR PRODUCING HIGH-PURITY Ni-V ALLOY

机译:高纯Ni-V合金,靶材,高纯Ni-V合金薄膜和生产高纯Ni-V合金的方法

摘要

Provided are a high purity Ni-V alloy, high purity Ni-V alloy target and high purity Ni-V alloy thin film wherein the purity of the Ni-V alloy excluding Ni, V and gas components is 99.9wt% or higher, and the V content variation among ingots, targets or thin films is within 0.4%. With these high purity Ni-V alloy, high purity Ni-V alloy target and high purity Ni-V alloy thin film having a purity of 99.9wt% or higher, the variation among ingots, targets or thin films is small, the etching property is improved, and isotopic elements such as U and Th that emit alpha particles having an adverse effect on microcircuits in a semiconductor device are reduced rigorously. And further provided is a manufacturing method of such high purity Ni-V alloy capable of effectively reducing the foregoing impurities.
机译:提供一种高纯度Ni-V合金,高纯度Ni-V合金靶和高纯度Ni-V合金薄膜,其中除Ni,V和气体成分之外的Ni-V合金的纯度为99.9wt%或更高,并且铸锭,靶材或薄膜之间的V含量变化在0.4%以内。使用这些纯度为99.9wt%以上的高纯度Ni-V合金,高纯度Ni-V合金靶和高纯度Ni-V合金薄膜,铸锭,靶或薄膜之间的偏差小,蚀刻性优异。改进了这种方法,并严格减少了发射对半导体器件中的微电路有不利影响的诸如α和U的同位素元素。并且进一步提供了能够有效地减少上述杂质的这种高纯度Ni-V合金的制造方法。

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