首页> 外国专利> METHOD FOR PRODUCING A POROUS NANOCRYSTALLINE SEMICONDUCTOR LAYER, POROUS NANOCRYSTALLINE SEMICONDUCTOR LAYER, USE THEREOF, ANODE, AND SECONDARY LITHIUM-ION BATTERY

METHOD FOR PRODUCING A POROUS NANOCRYSTALLINE SEMICONDUCTOR LAYER, POROUS NANOCRYSTALLINE SEMICONDUCTOR LAYER, USE THEREOF, ANODE, AND SECONDARY LITHIUM-ION BATTERY

机译:制备多孔纳米半导体层,多孔纳米半导体层的方法,使用其,阳极和二次锂离子电池的方法

摘要

A method for producing a porous nanocrystalline semiconductor layer (100) is provided, including: a) providing a substrate (10) having a substrate surface; b) coating a semiconductor layer (12) on the substrate surface; c) coating a metal containing layer (14) on the semiconductor layer; d) heat treating the semiconductor layer and the metal containing layer at a temperature and for a time period such that the semiconductor and the metal partially interdiffuse and the semiconductor is at least partially crystallized; and e) least partially removing the metal. Further, a porous nanocrystalline semiconductor layer, a use thereof, an anode, and a secondary lithium-ion battery are provided.
机译:提供一种用于制造多孔纳米晶体半导体层(100)的方法,该方法包括:a)提供具有衬底表面的衬底(10); b)在衬底表面上涂覆半导体层(12); c)在半导体层上涂覆含金属的层(14); d)在一定温度和时间段内热处理半导体层和含金属层,使得半导体和金属部分地相互扩散并且半导体至少部分地结晶; e)至少部分除去金属。此外,提供了多孔纳米晶体半导体层,其用途,阳极和二次锂离子电池。

著录项

  • 公开/公告号EP3087629B1

    专利类型

  • 公开/公告日2019-03-27

    原文格式PDF

  • 申请/专利权人 UNIVERSITÄT STUTTGART;

    申请/专利号EP20130814164

  • 发明设计人 STRUNK HORST;QU FEI;

    申请日2013-12-23

  • 分类号H01M4/04;H01M4/1395;H01M4/38;H01M4/134;H01M4/02;H01L21/02;H01M10/052;

  • 国家 EP

  • 入库时间 2022-08-21 12:30:52

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