FABRICATION METHOD FOR A NANOSTRUCTURED LANTHANUM OXIDE HUMIDITY SENSOR AND CORRESPONDING SENSOR DEVICE

摘要

A thin film gas sensor device includes a substrate, a nanostructured thin film layer, and a first and a second electrode. The nanostructured thin film layer is supported by the substrate and is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo an increase in a density of the holes in the presence of a target gas, thereby decreasing an electrical resistance of the nanostructured thin film layer. The first and the second electrodes are supported by the substrate and are operably connected to the nanostructured thin film layer, such that the decrease in electrical resistance can be detected.