首页> 外国专利> SINGLE-CRYSTAL DIAMOND, METHOD FOR MANUFACTURING SINGLE-CRYSTAL DIAMOND, AND CHEMICAL VAPOR DEPOSITION DEVICE USED IN SAME

SINGLE-CRYSTAL DIAMOND, METHOD FOR MANUFACTURING SINGLE-CRYSTAL DIAMOND, AND CHEMICAL VAPOR DEPOSITION DEVICE USED IN SAME

机译:单晶金刚石,制造单晶金刚石的方法以及在同一方法中使用的化学气相沉积装置

摘要

Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.
机译:提供一种用于制造单晶金刚石的方法,该方法包括以下步骤:在辅助板的至少一部分表面上形成保护膜;以及在辅助板的至少一部分表面上形成保护膜。准备金刚石晶种衬底;将具有保护膜的辅助板布置在腔室内,该保护膜具有形成在该辅助板上的保护膜,以及金刚石籽晶衬底。在将含碳气体引入腔室中的同时,通过化学气相沉积法在金刚石籽晶基板的主表面上生长单晶金刚石。

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