Low dielectric constant silicon oxide-based dielectric layer for integrated circuit structures having improved compatibility with via filler materials, and method of making same

摘要

The capacitor that one integrated circuit structure is disclosed between nigh conductive portion can be used carbon containing low k silicon oxide dielectric materials and wherein reduce, by the careful control of the carbon content of the dielectric material in two regions of integrated circuit structure, the problem of without facilitating via poisoning. It include region between the conductor wire for the neighbouring protrusion that first area is formed on the insulating layer below one, wherein undesirable capacitor can be horizontally formed between such adjacent conductor wire, and the secondth area includes region on the conductor wire of protrusion, wherein through-hole, which is usually formed from the coating that the conductor wire of the protrusion by dielectric layer is interconnected to metal, upwardly extends. In one embodiment, the carbon containing low k silicon oxide dielectric materials for first area between the conductor wire of neighbouring protrusion have a high carbon content to provide the maximum reduction of the dielectric constant of the dielectric material of the maximum reduction in the horizontal capacitor for developing between horizontally adjacent line, and the carbon containing low k silicon oxide dielectric materials for the secondth area on the conductor wire of protrusion have the carbon content of a reduction to mitigate the poisoning of the through-hole formed by the dielectric material in this secondth area. Two first and second regions have the carbon content of same or like reduction in another embodiment, it is not enough in the carbon containing low k silicon oxide dielectric materials for two first and second respective regions for therefore providing the carbon content of undesirable capacitor for being enough horizontally to reduce formation between the conductor wire of the neighbouring protrusion in firstth area via making in the 2nd region.Among formed through-hole poisoning lead toimage