METHOD OF A DONOR SUBSTRATE UNDERGOING RECLAMATION

摘要

A donor substrate (502; 602; 702) in a layer transfer process, is stabilized by attaching a backing substrate (504; 604; 703). The backing substrate (504; 604; 703) allows thermal and mechanical stabilization during high-power implant processes. Upon cleaving the donor substrate (502; 602; 702) to release a thin layer of material to a target substrate (510), the backing substrate (504; 604; 703) prevents uncontrolled release of internal stress leading to buckling/fracture of the donor substrate (502; 602; 702). The internal stress may accumulate in the donor substrate (502; 602; 702) due to processes such as cleave region (506; 704) formation, bonding to the target substrate (510), and/or the cleaving process itself, with uncontrolled bow and warp potentially precluding reclamation/reuse of the donor substrate (502; 602; 702) in subsequent layer transfer processes. In certain embodiments the backing substrate (504; 604; 703) may exhibit a Coefficient of Thermal Expansion (CTE) substantially matching, or complementary to, that of the donor substrate (502; 602; 702). In some embodiments the backing substrate (504; 604; 703) may include a feature such as a lip (606).