HIGH-SELECTIVITY AND LOW-STRESS CARBON HARD MASK BY PULSED LOW-FREQUENCY RF POWER

摘要

To provide a method of forming high-etch selectivity and low-stress ashable hard masks by using plasma chemical vapor deposition.SOLUTION: A method includes pulsing low-frequency radio frequency power while keeping high-frequency radio frequency power constant by using a dual radio frequency plasma source during deposition of an ashable hard mask. The low-frequency radio frequency power can be pulsed between non-zero levels or by switching the power on and off.EFFECT: A deposited high-selectivity ashable hard mask has decreased stress due to one or more factors including decreased ion and atom impinging on the ashable hard mask and lower levels of hydrogen trapped in the ashable hard mask.SELECTED DRAWING: Figure 2