Implantation with solid aluminum iodide (ALI3) to generate aluminum atomic ions and in situ cleaning of aluminum iodide and its associated by-products

摘要

An ion implantation system is provided with an ion source configured to form an ion beam from aluminum iodide. The beam line assembly selectively transports the ion beam to an end station that receives the ion beam for implanting aluminum ions into the workpiece. The ion source comprises a semiconductor material source comprising solid aluminum iodide. The solid source vaporizer is configured to define gaseous aluminum iodide by vaporizing aluminum iodide. The arc chamber forms a plasma from gaseous aluminum iodide. The arc current supplied from the power source is configured to dissociate aluminum ions from aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. The water vapor source further supplies water and reacts with residual aluminum iodide to form hydroiodic acid. Residual aluminum iodide and hydroiodic acid are discharged from the system.