Plenoptic sensor, manufacturing method thereof, and arrangement having plenoptic sensor

摘要

The invention relates to the monolithic integration of a plenoptic structure on an image sensor, using a material with a low refractive index on the substrate of photosensors (including or not including colour filters and/or pixel microlenses) and arranging a material with a high refractive index on said material with a low refractive index in order to create the plenoptic microlenses. Plenoptic lenses are created directly on the substrate of photosensors. Photosensors with a high integration density are arranged at minimum distances in order to minimise inter-pixel interferences, having, on the integration density end, "deformed square" geometries on the vertices thereof adjacent to a pixel of the same colour, removing any photosensitive area from said vertices in order to distance them from the noise of adjacent pixels of the same colour (irradiances of circles and Airy disks of neighboring pixels of the same colour). The light efficiency is increased by structures of plenoptic microlenses at variable distances from the substrate (less on the periphery thereof) and/or with more asymmetric profiles on the periphery thereof and/or pixels of different sizes and shapes towards the periphery of the sensor. Micro-objectives are produced by the creation of alternate layers of low and high refractive index.